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The effects of surface recombination on the steady-state carrier profiles and photocurrent in perovskite solar cells are investigated in this paper. The continuity equations for both holes and electrons are solved considering carrier drift and diffusion under the exponential carrier generation profile in the perovskite layer and considering both bulk and interface carrier recombination. An analytical expression for the solar-induced photocurrent is derived. The rate of carrier recombination at the interfaces has a very significant effect on the carrier profile, photocurrent, and, hence, on the charge collection efficiency. The external current density is calculated considering the dark current and nominal solar spectrum-induced photocurrent. The proposed model is fitted and verified with published experimental results from various publications. The fittings of the model with experimental results provide information about the interface and bulk charge carrier transport parameters.