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We investigate spin transport through graphene-like substrates stubbed vertically with transition-metal-dichalkogenides (TMDs). A tight-binding model is used based on a graphene-like Hamiltonian that includes di?erent types of spin-orbit coupling (SOC) terms permitted by the C3v symmetry group in TMDs/graphene-like heterostructures. The results show a spin modulation obtained by tuning the strength and sign of the Fermi energy EF and not by varying the SOC strength as is mainly the case of Datta and Das. The spin conductance is directly controlled by the value of EF . In addition, a perfect electron-spin modulation is obtained when a vertical strain is introduced. In this case, the spin conductance exhibits a strong energy dependence. The results may open the route to a combination of graphene-like substrates with TMD stubs and the development of spin-transistor devices controlled by the Fermi energy rather than the SOC strength.